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Disentangling surface and bulk transport in topological-insulator p-n junctions
journal contribution
posted on 2018-07-25, 10:05 authored by Dirk Backes, Danhong Huang, Rhodri Mansell, Martin Lanius, Jorn Kampmeier, David A. Ritchie, Gregor Mussler, Godfrey Gumbs, Detlev Grutzmacher, Vijay NarayanBy combining n-type Bi2Te3 and p-type Sb2Te3 topological insulators, vertically stacked p-n junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between n- and p-type surface carriers. Here, we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical Bi2Te3/Sb2Te3 heterostructures with varying relative thicknesses of the top and
bottom layers. With increasing thickness of the Sb2Te3 layer we observe a change from n- to p-type behavior via a specific thickness where the Hall signal is immeasurable. Assuming that the the bulk and surface states contribute in parallel, we can calculate and reproduce the dependence of the Hall and longitudinal components of resistivity on the film thickness. This highlights the role played by the bulk conduction channels which, importantly,
cannot be probed using surface-sensitive spectroscopic techniques. Our calculations are then buttressed by a semiclassical Boltzmann transport theory which rigorously shows the vanishing of the Hall signal. Our results
provide crucial experimental and theoretical insights into the relative roles of the surface and bulk in the vertical topological p-n junctions.
Funding
D.B., D.R., and V.N. acknowledge funding from the Leverhulme Trust, UK, D.B., R.M., D.R., and V.N. acknowledge funding from EPSRC (UK). D.H. would like to thank the support from the Air Force Office of Scientific Research (AFOSR). G.M., M.L., J.K., and D.G. acknowledge financial support from the Deutsche Forschungsgesellschaft-funded priority Program No. SPP1666.
History
School
- Science
Department
- Physics
Published in
Physical Review BVolume
96Issue
12Citation
BACKES, D. ... et al, 2017. Disentangling surface and bulk transport in topological-insulator p-n junctions. Physical Review B, 96 (12), 125125.Publisher
© American Physical SocietyVersion
- AM (Accepted Manuscript)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2017Notes
This paper was published in the journal Physical Review B and the definitive published version is available at https://doi.org/10.1103/PhysRevB.96.125125.ISSN
2469-9950eISSN
2469-9969Publisher version
Language
- en