The incorporation of Si1-xGex alloy heterostructures into conventional Si processes
has been proposed as a means of improving the operating frequency
and overall performance of Si field effect transistors. One parameter expected
to benefit from this approach is the hole mobility, which would have important
implications for high speed CMOS applications. Measured values of the
hole mobility, however, have failed to live up to early expectations, and much
ongoing research is directed at understanding whether this is an intrinsic limitation
(e.g. due to alloy disorder scattering), or due to imperfections arising
in the growth and fabrication process.
In this thesis, a detailed theoretical study is presented of the hole mobility in
single sub-band Si1-xGex heterostructures. [Continues.]
A Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy at Loughborough University.