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Single-layer bandpass active frequency selective surface

journal contribution
posted on 2008-07-24, 08:39 authored by Ghaffer I. Kiani, Kenneth L. Ford, Karu P. Esselle, Andrew R. Weily, Chinthana PanagamuwaChinthana Panagamuwa, John C. Batchelor
A single-layer, bandpass, active FSS is presented. It shows good angle of incidence stability for TE incidence, at the operating frequency of 2.45 GHz. It is based on circular loop aperture with each unit cell having four PIN diodes. A novel method for dc biasing is used. About 12 dB average variation in transmission loss, between ON and OFF states, has been experimentally achieved at 2.45 GHz.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Citation

KIANI, G.I. ... et al, 2008. Single-layer bandpass active frequency selective surface. Microwave and optical technology letters, 50 (8), pp. 2149-2151

Publisher

© John Wiley and Sons

Publication date

2008

Notes

This article is Restricted Access. It was published in the journal, Microwave and optical technology letters [© John Wiley and Sons] and is available at: http://www3.interscience.wiley.com/journal/37176/home

ISSN

0895-2477

Language

  • en

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