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Title: Structural and electrical characterization of polycrystalline NbO2 thin film vertical devices grown on TiN-coated SiO2/Si substrates
Authors: Joshi, Toyanath
Borisov, Pavel
Lederman, David
Issue Date: 2018
Publisher: AIP Publishing © The Authors
Citation: JOSHI, T., BORISOV, P. and LEDERMAN, D., 2018. 2018. Structural and electrical characterization of polycrystalline NbO2 thin film vertical devices grown on TiN-coated SiO2/Si substrates. Journal of Applied Physics, 124 (11), 114502.
Abstract: We report on the electrical properties of polycrystalline NbO2 thin film vertical devices grown on TiN coated SiO2/Si substrates using pulsed laser deposition. First, we analyzed the thickness and contact size dependences of threshold switching of NbO2 films grown in 10 mTorr Ar/O2 mixed growth pressure, where 25.1%/74.9% of NbO2/Nb2O5 surface composition content was estimated by ex-situ x-ray photoelectron spectroscopy. Then the threshold switching and self-sustained current oscillatory behavior of films with different NbO2/Nb2O5 composition ratios was measured and analyzed. The current-voltage measurement revealed that the leakage current property in the insulating state was dominated by the trap-charge assisted Poole-Frankel conduction mechanism. All films showed threshold switching behavior in agreement with the previously proposed Joule heating mechanism. The second film was grown in lower (1 mTorr) growth pressure, which resulted in a higher (34.2%/65.8%) NbO2/Nb2O5 film surface composition. The film grown in higher growth pressure demonstrated lower off-state leakage current, faster switching, and self-sustained oscillations with higher frequency than the film grown in lower growth pressure.
Description: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in JOSHI, T., BORISOV, P. and LEDERMAN, D., 2018. 2018. Structural and electrical characterization of polycrystalline NbO2 thin film vertical devices grown on TiN-coated SiO2/Si substrates. Journal of Applied Physics, 124 (11), 114502 and may be found at https://doi.org/10.1063/1.5038837.
Sponsor: This work was supported in part by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA (Contract No. 2013-MA-2382) and the West Virginia University Shared Research Facilities.
Version: Accepted for publication
DOI: 10.1063/1.5038837
URI: https://dspace.lboro.ac.uk/2134/35315
Publisher Link: https://doi.org/10.1063/1.5038837
ISSN: 0021-8979
Appears in Collections:Published Articles (Physics)

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