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A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition
journal contribution
posted on 2019-03-19, 10:49 authored by Xuepeng Zhan, Chengda Shen, Zhigang Ji, Jiezhi Chen, Hui FangHui Fang, Fangbin Guo, Jianfu ZhangA simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this work, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n- and p- FETs.
Funding
This work is financially supported by the Engineering and Physical Science Research Council of UK under EP/L010607/1, China Key Research and Development Program (2016YFA0201802), National Natural Science Foundation of China (61874068) and China Postdoctoral Science Foundation (2018M630777).
History
School
- Science
Department
- Computer Science
Published in
IEEE Electron Device LettersCitation
ZHAN, X. ... et al, 2019. A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters, 40 (5), pp.674-677.Publisher
© IEEEVersion
- AM (Accepted Manuscript)
Acceptance date
2019-03-04Publication date
2019-03-07Notes
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.ISSN
0741-3106eISSN
1558-0563Publisher version
Language
- en