HIBBERD, C.J....et al., 2008. Chemical incorporation of copper into indium selenide thin films. IN: Hutchins, M. and Pearsall, N. (eds.) . 4th Photovoltaic Science Application and Technology (PVSAT-4) Conference and Exhibition, 2-4 April 2008, University of Bath.
Indium selenide thin-films have been treated in
a copper-containing chemical bath with the
goal of forming a precursor layer capable of
being converted into copper indium diselenide.
The conversion process was carried out by
annealing the layers in a tube furnace in the
presence of selenium vapour. The phase
content of the layers as a function of
composition and annealing temperature has
been investigated by Raman spectroscopy. It
is concluded that copper selenide is formed
during the chemical bath treatment and that
during annealing the copper selenide reacts
first with elemental selenium vapour and then
with the indium selenide to form chalcopyrite
CuInSe2. Secondary phases of CuIn3Se5 and
Cu-Au ordered CuInSe2 have been detected in
annealed copper-poor layers.