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Title: Incorporation of copper into indium gallium selenide layers from solution
Authors: Hibberd, Christopher J.
Ganchev, J.
Kaelin, M.
Ernits, K.E.
Tiwari, A.N.
Issue Date: 2008
Publisher: © IEEE
Citation: HIBBERD, C.J. ... et al., 2008. Incorporation of copper into indium gallium selenide layers from solution. IN: 33rd IEEE Photovolatic Specialists Conference. PVSC '08. San Diego, CA, USA, 11-16 May 2008, pp. 1 - 5
Abstract: A chemical method for the incorporation of copper into indium gallium selenide (IGS) layers has been developed. The resulting copper-containing precursor layers have been annealed in the presence of selenium vapour with the goal of forming Cu(In, Ga)Se2 (CIGS) layers. It is found that copper ions in solution are incorporated into IGS layers during immersion, resulting in the formation of a precursor layer containing both copper selenides and IGS. When aqueous solutions are used for this process, corrosion of the molybdenum back contact occurs by reduction of copper ions in the solution. Use of an ethylene glycol solution prevents corrosion of the Mo and allows higher process temperatures, corresponding to higher reaction rates. During annealing, the precursor layers are converted into CIGS and the morphology of these layers is strongly affected by the availability of selenium whilst the substrate temperature is ramped up.
Description: This is a conference paper [© IEEE]. It is also available from: http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=4815197. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Version: Published
DOI: 10.1109/PVSC.2008.4922885
URI: https://dspace.lboro.ac.uk/2134/4892
ISBN: 978-1-4244-1640-0
ISSN: 0160-8371
Appears in Collections:Conference Papers and Presentations (Mechanical, Electrical and Manufacturing Engineering)

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