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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/4985

Title: Electromigration voiding in nanoindented, single crystal Al lines
Authors: Dwyer, Vincent M.
Wan Ismail, W.S.
Issue Date: 2001
Publisher: © American Institute of Physics.
Citation: DWYER, V.M. and WAN ISMAIL, W.S., 2001. Electromigration voiding in nanoindented, single crystal Al lines. Journal of Applied Physics, 89 (5), pp. 3064-3066
Abstract: We consider the interpretation of some theoretical and experimental work regarding electromigration voiding in nanoindented, single crystal aluminum lines. A recently suggested voiding criterion of a critical accumulated flux divergence is found, in fact, to be identical to the widely accepted critical stress criterion. The inclusion of the stress dependence of the atomic diffusion coefficient is shown to be vital when the steady state is characterized by J ≠ 0, such as in the case of a void growing at a constant rate. It is found, for example, that the stress required for steady void growth, within single crystal Al lines, is probably significantly smaller than previously suggested.
Description: This article was published in the serial, Journal of Applied Physics [© American Institute of Physics]. It is also available at: http://dx.doi.org/10.1063/1.1342436
Version: Published
DOI: 10.1063/1.1342436
URI: https://dspace.lboro.ac.uk/2134/4985
ISSN: 0021-8979
Appears in Collections:Published Articles (Electronic, Electrical and Systems Engineering)

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