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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/5070

Title: Energy production of single junction amorphous silicon modules with varying i-Layer thickness
Authors: Vorasayan, Pongpan
Betts, Thomas R.
Gottschalg, Ralph
Tiwari, A.N.
Keywords: Amorphous silicon
I-Layer thickness
Energy production
Issue Date: 2005
Publisher: PVSEC
Citation: VORASAYAN, P. ... et al, 2005. Energy production of single junction amorphous silicon modules with varying i-Layer thickness. Proceedings of the 15th Photovoltaic Science & Engineering Conference, Shanghai, China, 13-15 October 2005.
Abstract: The energy production of a number of single junction amorphous silicon (a-Si) solar modules with different intrinsic layer thicknesses is investigated. This has been carried out through both indoor measurement and real operating condition monitoring outdoors. After 13 months of light exposure, the fully degraded and seasonally annealed states, can be seen. The results indicate that the thinnest devices do not necessarily have the lowest degradation. The thicker devices which have higher initial efficiency, however do suffer greater efficiency degradation. Experiment also shows that energy production does not follow the initial Standard Test Condition (STC) rated efficiency as the highest can be seen in thinner modules, which initially have much lower efficiencies.
Description: This is a conference paper.
Version: Accepted for publication
URI: https://dspace.lboro.ac.uk/2134/5070
Appears in Collections:Conference Papers and Contributions (CREST)
Conference Papers and Presentations (Mechanical, Electrical and Manufacturing Engineering)

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