e115321.pdf (271.5 kB)
Polaronic memory resistors strongly coupled to electrodes
journal contribution
posted on 2010-01-22, 15:56 authored by A.S. Alexandrov, A.M. BratkovskyAttractive electron correlations due to an electron-vibron interaction can overcome the direct Coulomb
repulsion of polarons in deformable molecular quantum dots (MQDs). If it happens, a switching appears in the
I-V characteristics of the degenerate nonadiabatic molecular bridges weakly coupled with electrodes providing
a route to ultrafast “memristors” (memory resistors) as the basis for future oscillators, amplifiers and other
important circuit elements. Here, we extend our theory of polaronic memristors to adiabatic MQDs strongly
coupled with leads to show that the degeneracy of MQD (or multilevel energy structure) along with the
polaron-polaron attraction is a vital ingredient of its switching behavior in the strong-coupling regime as well.
History
School
- Science
Department
- Physics
Citation
ALEXANDROV, A.S. and BRATKOVSKY, A.M., 2009. Polaronic memory resistors strongly coupled to electrodes. Phsyical Review B, 80 (11), 115321, [5 p.].Publisher
© American Physical SocietyVersion
- VoR (Version of Record)
Publication date
2009Notes
This article was published in the journal, Physical Review B [© American Physical Society] and is also available from: http://link.aps.org/doi/10.1103/PhysRevB.80.115321ISSN
1098-0121Language
- en