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|Title: ||Voltage-dependent quantum efficiency measurements of amorphous silicon multijunction mini-modules|
|Authors: ||Hibberd, Christopher J.|
Betts, Thomas R.
|Keywords: ||Quantum efficiency|
|Issue Date: ||2011|
|Publisher: ||© Elsevier B.V.|
|Citation: ||HIBBERD, C.J. ... et al, 2011. Voltage-dependent quantum efficiency measurements of amorphous silicon multijunction mini-modules. Solar Energy Materials and Solar Cells, 95 (1), pp. 123-126.|
|Abstract: ||Multi-junction solar cells have the potential to provide higher efficiencies than single junction devices and to reduce the impact of Staebler-Wronski degradation on amorphous silicon (a-Si)devices. They could, therefore, reduce the cost of
solar electricity. However, their characterization presents additional challenges over that of single junction devices. Achieving acceptable accuracy of
any current-voltage calibration requires correction of the current-voltage data with external quantum efficiency measurements and spectral mismatch calculations. This paper presents voltage dependant EQE curves for both single junction and double junction a-Si solar cells, along with dispersion
curves extracted from these data. In the case of single junction a-Si devices the mismatch factor is known to be voltage dependent and a similar trend is shown to apply to multi-junction devices as well.
However, the error introduced into current voltage calibrations due to this bias dependence is found to be < 1% for spectral mismatch calculations.|
|Version: ||Accepted for publication|
|Publisher Link: ||http://dx.doi.org/10.1016/j.solmat.2010.03.039|
|Appears in Collections:||Published Articles (Mechanical, Electrical and Manufacturing Engineering)|
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