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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/6703

Title: Voltage-dependent quantum efficiency measurements of amorphous silicon multijunction mini-modules
Authors: Hibberd, Christopher J.
Plyta, Foteini
Monokroussos, Christos
Bliss, Martin
Betts, Thomas R.
Gottschalg, Ralph
Keywords: Quantum efficiency
Spectral response
Amorphous silicon
Issue Date: 2011
Publisher: © Elsevier B.V.
Citation: HIBBERD, C.J. ... et al, 2011. Voltage-dependent quantum efficiency measurements of amorphous silicon multijunction mini-modules. Solar Energy Materials and Solar Cells, 95 (1), pp. 123-126.
Abstract: Multi-junction solar cells have the potential to provide higher efficiencies than single junction devices and to reduce the impact of Staebler-Wronski degradation on amorphous silicon (a-Si)devices. They could, therefore, reduce the cost of solar electricity. However, their characterization presents additional challenges over that of single junction devices. Achieving acceptable accuracy of any current-voltage calibration requires correction of the current-voltage data with external quantum efficiency measurements and spectral mismatch calculations. This paper presents voltage dependant EQE curves for both single junction and double junction a-Si solar cells, along with dispersion curves extracted from these data. In the case of single junction a-Si devices the mismatch factor is known to be voltage dependent and a similar trend is shown to apply to multi-junction devices as well. However, the error introduced into current voltage calibrations due to this bias dependence is found to be < 1% for spectral mismatch calculations.
Version: Accepted for publication
DOI: 10.1016/j.solmat.2010.03.039
URI: https://dspace.lboro.ac.uk/2134/6703
Publisher Link: http://dx.doi.org/10.1016/j.solmat.2010.03.039
ISSN: 0927-0248
Appears in Collections:Published Articles (Mechanical, Electrical and Manufacturing Engineering)

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