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|Title: ||A modelling approach for long-term degradation of thin film silicon photovoltaic modules|
|Authors: ||Zhu, Jiang|
Betts, Thomas R.
|Issue Date: ||2010|
|Publisher: ||© The Solar Energy Society|
|Citation: ||ZHU, J. ... et al, 2010. A modelling approach for long-term degradation of thin film silicon photovoltaic modules. IN: Hutchins, M. and Pearsall, N. (eds.). Proceedings, Photovoltaic Science, Applications and Technology (PVSAT-6). Conference C91 of the Solar Energy Society, 24th-26th March, University of Southampton, UK, pp. 111-114.|
|Abstract: ||This paper introduces a new concept of approach
for modelling the ageing behaviour of a-Si PV
modules with voltage-dependent photocurrent.
The basis is the equivalent circuit of a PV module,
specifically the modified single diode model. The
parameters are extracted from I-V measurements.
Ageing is then analysed by relating these to the
environmental stresses seen by the devices. This
paper focuses on the behaviour the product of
carrier mobility and carrier life time (μτ), since the
μτ has been considered to be an important
indicator for module degradation of amorphous
silicon thin film devices. A fitting approach for
determining μτ is discussed and extended to be
applied to the outdoor module IV data. Three a-Si
modules of the same type operating under
different temperature conditions are analysed to
identify changes in the μT.|
|Description: ||This is a conference paper.|
|Version: ||Accepted for publication|
|Publisher Link: ||http://www.uk-ises.org/|
|Appears in Collections:||Conference Papers (Electronic, Electrical and Systems Engineering)|
Conference Papers and Contributions (CREST)
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