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Title: Modelling shading on amorphous silicon single and double junction modules
Authors: Johansson, A.
Gottschalg, Ralph
Infield, David
Issue Date: 2003
Publisher: © IEEE
Citation: JOHANSSON, A., GOTTSCHALG, R. and INFIELD, D.G., 2003. Modelling shading on amorphous silicon single and double junction modules. IN: Proceedings of 3rd World Conference on Photovoltaic Energy Conversion 2003, Vol.2, Osaka, Japan, 11th-18th May, pp. 1934-1937.
Abstract: The effect of shading amorphous silicon mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated, including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on measurements and simulations. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices; they always break down at the interconnection to the adjacent cell.
Description: This conference paper [© IEEE] is also available at: http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=9136. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Version: Published
DOI: 10.1109/WCPEC.2003.1306319
URI: https://dspace.lboro.ac.uk/2134/8198
Publisher Link: http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=9136
ISBN: 4990181603
Appears in Collections:Conference Papers and Contributions (Electronic, Electrical and Systems Engineering)
Conference Papers and Contributions (CREST)

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