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Electrical mismatch within single junction amorphous silicon and micromorph tandem thin film PV modules

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conference contribution
posted on 2011-03-09, 15:27 authored by Yingning Qiu, Tom BettsTom Betts, Ralph Gottschalg
Due to the electrical mismatch between the individual cells, the actual efficiency of a PV module is always lower than the sum of the cells under normal measurement conditions. The effect of this electrical mismatch is simulated for single junction amorphous silicon PV modules as well as micromorph thin film PV modules. This paper reports on the design of the realistic parameter distribution for the I-V simulation. It shows that due to the current mismatch in a double junction solar cell, these devices seem to be more significantly affected by similar variation in parameters, which would indicate that tighter production control is necessary but also that it will be more involved to measure these devices with sufficient accuracy. It is shown that device mismatch actually results in a lower fill factor, which is slightly different to what is seen for single cells.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Research Unit

  • Centre for Renewable Energy Systems Technology (CREST)

Citation

QIU, Y.N., BETTS, T.R. and GOTTSCHALG, R., 2009. Electrical mismatch within single junction amorphous silicon and micromorph tandem thin film PV modules. IN: 34th IEEE Photovoltaic Specialists Conference (PVSC) 2009, Philadelphia, USA, 7th-12th June, pp. 000911-000916.

Publisher

© IEEE

Version

  • VoR (Version of Record)

Publication date

2009

Notes

This conference paper [© IEEE] is also available at: http://dx.doi.org/10.1109/PVSC.2009.5411142. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

ISBN

9781424429493

ISSN

0160-8371

Language

  • en

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