Loughborough University
Leicestershire, UK
LE11 3TU
+44 (0)1509 263171
Loughborough University

Loughborough University Institutional Repository

Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/8215

Title: Modelling spectral irradiation effects on single- and multijunction amorphous silicon photovoltaic devices
Authors: Betts, Thomas R.
Gottschalg, Ralph
Infield, David
Issue Date: 2002
Publisher: © IEEE
Citation: BETTS, T.R., GOTTSCHALG, R. and INFIELD, D., 2002. Modelling spectral irradiation effects on single- and multijunction amorphous silicon photovoltaic devices. IN: Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, New Orleans, May 19-24, pp. 1242-1245
Abstract: It has been previously reported that variations in the spectral irradiance under which an amorphous silicon device operates can have a significant effect on its elecbical performance. often contributing to enhanced system yields compared to crystalline-based systems. In this work, spectral irradiance data based on models and measurements taken at the Centre for Renewable Energy Systems Technology (CREST) in the UK are presented. These are input into electrical models for amorphous silicon devices incorporating different number of junctions in order to investigate the impact of changing spectral irradiation. The results can be classified broadly as primary effects. those accounting for the available spectrally useful irradiance and secondary effects that consider the effects of mismatched currents in the slacked cells of multi-junction devices. The modeled short circuit currents correlate well with measurements and are demonstrated as a useful tool for further investigation.
Description: This is a conference paper [© IEEE]. It is also available at: http://ieeexplore.ieee.org/ Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Version: Published
DOI: 10.1109/PVSC.2002.1190833
URI: https://dspace.lboro.ac.uk/2134/8215
Publisher Link: http://dx.doi.org/10.1109/PVSC.2002.1190833
ISBN: 0780374711
ISSN: 1060-8371
Appears in Collections:Conference Papers and Contributions (Electronic, Electrical and Systems Engineering)
Conference Papers and Contributions (CREST)

Files associated with this item:

File Description SizeFormat
betts2.pdf307.22 kBAdobe PDFView/Open

 

SFX Query

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.