Cropper2010a-RS-05+Fig.pdf (272.08 kB)
Stacking faults in ultra-thin films of silver on Al(111) investigated by medium energy ion scattering
journal contribution
posted on 2011-06-28, 15:30 authored by Christopher J. Howe, Michael Cropper, Richard M. Wardle, P. Bailey, T.C.Q. NoakesMedium energy ion scattering has been used to investigate depositions of 0.2, 1.4, 3.5 and 4.8 ML of silver onto Al(111). Energy profiles indicate alloying to the extent that aluminium is still visible after the
deposition of 4.8 ML. From assessments of the visibility, blocking dips and fits using VEGAS simulations it is
shown that the first two layers continue the fcc stacking but after that hcp and fcc twin-type stacking faults
occur. The 1.4 ML structure is consistent with a mixed structure of 85% fcc and 15% hcp indicating that some
silver occupies a third layer. The blocking curve from the structure formed by 3.5 ML equivalent deposition
can be simulated by 56% fcc, 32% hcp and 12% fcc twin and that from 4.8 ML by 59% fcc, 23% hcp and 18% fcc
twin. This provides direct evidence of the incidence of hcp stacking when silver is deposited onto Al(111) in
the range between 2 and 5 ML.
History
School
- Science
Department
- Physics
Citation
HOWE, C.J. ... et al, 2010. Stacking faults in ultra-thin films of silver on Al(111) investigated by medium energy ion scattering. Surface Science, 604 (19-20), pp. 1658-1665.Publisher
© ElsevierVersion
- AM (Accepted Manuscript)
Publication date
2010ISSN
0039-6028Publisher version
Language
- en